| PART |
Description |
Maker |
| AFT05MS004N AFT05MS004NT1 |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| STH360N4F6-2 |
High avalanche ruggedness
N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| STL11N6F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPP50R380CE-15 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STP400N4F6 STI400N4F6 |
High avalanche ruggedness
|
STMicroelectronics
|
| STW48N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STB80N4F6AG |
High avalanche ruggedness
|
STMicroelectronics
|
| STF28N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| IPW60R070P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STP110N8F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPD60R460CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STW65N65DM2AG |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
